By Hagen Marien
This booklet presents perception into natural electronics know-how and in analog circuit thoughts that may be used to extend the functionality of either analog and electronic natural circuits. It explores the area of natural electronics know-how for analog circuit purposes, particularly shrewdpermanent sensor structures. It makes a speciality of the entire construction blocks within the information direction of an natural sensor method among the sensor and the electronic processing block. Sensors, amplifiers, analog-to-digital converters and DC-DC converters are mentioned intimately. assurance comprises circuit ideas, circuit implementation, layout judgements and dimension result of the development blocks described.
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Extra info for Analog Organic Electronics: Building Blocks for Organic Smart Sensor Systems on Foil
Without aiming to give a full material and chemical analysis, a few of the most promising engineered organic semiconductors are summarized in this section. 1 Buckminsterfullerene Buckminsterfullerene, better known as Bucky balls or C60 , is a spherical molecule built with carbon atoms only. 2 Organic Semiconductors 21 Fig. 5 Graphical representation (Wikipedia 2011) of the chemical structure of (a) Buckminsterfullerene, (b) a graphene sheet, and (c) a carbon nanotube pentagons, is visualized in Fig.
The gray curve for a VG = −8 V and the black curve for a VG = −6 V that are parallel in the saturation region. The physical presence of the backgate on top of the transistor also has its influence on the capacitances that are experienced at the contacts. 4 Technology in This Work 39 5 BG=S BG=G 4 |I SD | [µA] VG=−2V:−2V:−10V 3 2 1 0 −20 −15 −10 −5 0 V [V] D Fig. 20 Measured VD − I D characteristics of a 140 µm/5 µm gate-backgate connected transistor and a 140 µm/5 µm transistor with a backgate connected to the ground.
The VT value is unpredictable since it depends on the charge captured on the floating backgate. , when it is connected to the source, the VT remains unchanged compared to the VT of the original 3-contact transistor. The mobility of the transistor on the other hand is not affected by the presence of the backgate. The physical location of the backgate creates a second transistor on top of the original 3-contact transistor. This second thin-film transistor is built with the backgate 32 2 Organic Thin-Film Transistor Technology (a) 7 (b) Original 3−pin 4−pin floating BG 4−pin BG=S 6 7 VG sweep @ VD=−10V VG sweep @ VD=−2V 6 V sweep @ V =−10V V sweep @ V =−2V BG 5 ID [µ A] D I [µ A] 5 4 3 2 1 −10 −5 V [V] G 0 5 D 3 1 −15 D 4 2 0 −20 BG 0 −20 −15 −10 −5 0 5 V [V] G Fig.